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Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C

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submitted on 2024-01-31, 11:30 and posted on 2024-02-01, 12:18 authored by Bo Wang, Man-Kay Law

This article presents a BJT-based CMOS temperature sensor with a wide sensing range from −50 °C to 180 °C. To effectively relax the sensor resolution requirement and conversion time over the entire temperature range to improve energy efficiency, we introduce a nonlinear subranging readout scheme together with double sampling to achieve dynamic reconfiguration of the sensor readout according to the ambient temperature. We further reduce the sensor power at high temperature by devoting the \beta -cancellation circuit only for BJT biasing while applying a temperature-independent bias current for the other sensor building blocks. Implemented in 0.18- \mu \text{m} CMOS with four-wire connections and switch-leakage compensation based on small BJTs, the proposed sensor chip prototype achieves a high resolution-FoM of 7.2 pJ \cdot \text{K}^{{2}} at 150 °C, while featuring a small sensing error of ±0.45 °C under a 1.5-V supply.

Other Information

Published in: IEEE Journal of Solid-State Circuits
License: https://creativecommons.org/licenses/by/4.0/
See article on publisher's website: https://dx.doi.org/10.1109/jssc.2022.3208770

Funding

Open Access funding provided by the Qatar National Library.

History

Language

  • English

Publisher

IEEE

Publication Year

  • 2022

License statement

This Item is licensed under the Creative Commons Attribution 4.0 International License.

Institution affiliated with

  • Hamad Bin Khalifa University
  • College of Science and Engineering - HBKU