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Study of wide bandgap SnOx thin films grown by a reactive magnetron sputtering via a two-step method

journal contribution
submitted on 2024-06-12, 07:34 and posted on 2024-06-12, 07:35 authored by Y. Zakaria, B. Aïssa, T. Fix, S. Ahzi, A. Samara, S. Mansour, A. Slaoui

In the present work, we report on the microstructural and optoelectronic properties of SnOx thin films deposited by a reactive radio frequency magnetron sputtering. After SnOx growth by sputtering under O2/Ar flow, we have used three different treatment methods, namely (1) as deposited films under O2/Ar, (2) vacuum annealed films ex-situ, and (3) air annealed films ex-situ. Effects of the O2/Ar ratios and the growth temperature were investigated for each treatment method. We have thoroughly investigated the structural, optical, electrical and morphology of the different films by several advanced techniques. The best compromise between electrical conductivity and optical transmission for the use of these SnOx films as an n-type TCO was the conditions O2/Ar = 1.5% during the growth process, at 250 °C, followed by a vacuum post thermal annealing performed at 5 × 10–4 Torr. Our results pointed out clear correlations between the growth conditions, the microstructural and optoelectronic properties, where highly electrically conductive films were found to be associated to larger grains size microstructure. Effects of O2/Ar flow and the thermal annealing process were also analysed and discussed thoroughly.

Other Information

Published in: Scientific Reports
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Additional institutions affiliated with: Core Labs - QEERI


Open Access funding provided by the Qatar National Library.



  • English


Springer Nature

Publication Year

  • 2022

License statement

This Item is licensed under the Creative Commons Attribution 4.0 International License.

Institution affiliated with

  • Hamad Bin Khalifa University
  • Qatar Environment and Energy Research Institute - HBKU